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2 016 037

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C1

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IPC

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Application

4913879/05, 1991-02-06

(22)

Actual filing date

1991-02-06

(45)

Published

1994-07-15

(72)

Inventor

Khitrova L.M.Bratsun S.Ja.Beljaev V.P.Tovstenko V.I.

(73)

Holder

Gosudarstvennoe Predprijatie Nauchno-Proizvodstvennoe Ob"Edinenie

METHOD FOR GLUEING TOGETHER PLATE OF CdHgTe AND SAPPHIRE SUBLAYER Russian patent published in 1994 - IPC

Abstract RU 2016037 C1

FIELD: photoelectric semiconductor. SUBSTANCE: composition which contains resin (100 mass parts) and sulfonium derivative of hexafluorinephosphate (5-10 mass parts) is applied on plate of CdxHg1-xTe and sapphire sublayer during their glueing together. Then these surfaces are jointed and sublayer is affected by laser irradiation at power 105-107 W/cm2. EFFECT: improves efficiency of the method. 1 tbl

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RU 2 016 037 C1

Authors

Khitrova L.M.

Bratsun S.Ja.

Beljaev V.P.

Tovstenko V.I.

Dates

1994-07-15—Published

1991-02-06—Filed

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