METHOD OF PRODUCING MATRIX PHOTODETECTOR Russian patent published in 2009 - IPC H01L31/18 

Abstract RU 2343590 C1

FIELD: physics.

SUBSTANCE: in compliance with the invention, proposed method comprises the following operations. In applying dielectrics, plating and photolithography, photo-sensitive elements are formed on first doped side of solid-state plate furnished with the said first doped side and second side. At the intermediate stage, aforesaid first doped side of said solid-state plate is glued to intermediate substrate with the help of intermediate glue-melt. Second side of aforesaid solid-state plate is subjected to chemical-and-mechanical thinning and anodic oxidation. The said second side is glued to permanent polymer glue to bearing substrate. Now, the aforesaid intermediate substrate and intermediate glue are removed from the solid-state plate surface to separate it, along with the bearing substrate, into separate matrixes.

EFFECT: simpler design and reduced weight of IR-system hardware.

7 dwg

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RU 2 343 590 C1

Authors

Khitrova Ljudmila Mikhajlovna

Kiseleva Larisa Vasil'Evna

Kasatkin Igor' Leonidovich

Dates

2009-01-10Published

2007-07-09Filed