FIELD: quantum electronics. SUBSTANCE: device has electronic beam source, units for beam removal and laser target with heterogeneous structure. Laser has support substrate, cavity, which is embraced by two mirrors, and active semiconductor population. At least part of heterogeneous structure target has loaded elements, which differ in characteristics of their crystal lattice in unstressed mode by more than 0.1 percent. Boundaries between said elements in heterogeneous structure are coherent. EFFECT: increased functional capabilities. 13 cl, 8 dwg
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