MULTICOMPONENT PHOTODETECTOR MANUFACTURING PROCESS Russian patent published in 1999 - IPC

FIELD: semiconductor photodetectors including those sensitive within several ranges of spectrum. SUBSTANCE: use is made of intermediate substrate to attach to it source semiconductor plate by means of intermediate molten adhesive. Then, upon thinning semiconductor plate by standard chemical and mechanical process, blocks are separated from semiconductor material attached by means of adhesive to intermediate substrate; block obtained is attached to carrying substrate on semiconductor material side by means of polymeric adhesive whereupon intermediate substrate is removed together with intermediate molten adhesive from semiconductor plate, and the latter is polished until it is brought to working thickness; then film contacts and photosensitive element configuration are formed on this surface. EFFECT: reduced input of semiconductor material; enlarged functional capabilities. 2 dwg