FIELD: electronic industry. SUBSTANCE: p+(n+)-layer is irradiated by two light fluxes modulated at the same frequency; collecting coefficients of the fluxes differ significantly. Relation of amplitudes of modulations of light fluxes and phase shift between them is set so, that variable emf changes to zero value, which is measured at contacts and applied to p-n structure or at plates of the capacitor, between which it is located. Values L and τ are determined according to absolute value of collecting coefficient relation, according to the relation depending on modulation frequency and (or) phase shift. The method permits to improve precision of measurement of diffusion length L and life time t of non-equilibrium carriers in semiconductor plates provided with contacts and without contacts. EFFECT: improved precision. 2 cl
