COORDINATE-SENSITIVE SENSOR MULTISCAN Russian patent published in 2010 - IPC H01L27/146 

FIELD: electricity.

SUBSTANCE: coordinate-sensitive sensor multiscan represents silicon structure with dielectric insulation, made of common silicon substrate, where there are the first and second photosensitive n-areas arranged as having line of separation and isolated from each other. They are made of single-crystal silicon of n-type with depth of Q=15 micrometre, length l=20 mm and width F=(430÷510) micrometre each. Along the line of their division and symmetrically relative to it there is a set of cells serially arranged with distance between them of n=30 micrometre. Cell is made of four pairs of opposite discrete p⁺n diodes having diametre d=10 micrometre arranged with pitch h=30 micrometre along division line. Diodes of different pairs are arranged at various distances from line of division related to diffusion length of minor charge carriers in basic photosensitive n-area. Symmetrical diodes in the first and second basic photosensitive n-areas are connected to each other by means of links arranged over line of division, having width of 1.5 d and various length. At the distance F from division line symmetrically to it there is the first and second resistive n⁺-layers having width of 100 micrometres each and length exceeding total length of the whole row of discrete diodes. Diodes arranged in the first basic area are connected to the first resistive n+-layer, and diodes located in the second basic area are connected to the second resistive n⁺layer.

EFFECT: invention provides for high efficiency.

2 dwg, 3 ex