STRUCTURE WITH VARIABLE CAPACITANCE Russian patent published in 1994 - IPC

FIELD: radio electronics. SUBSTANCE: structure with variable capacitance includes two plates between which assemblage of dielectric films with current conducting coats is located facing towards one plate. Adjacent films are directly interconnected in sections of immediate connection located with constant spacing. For subsequent films these sections are displaced by half-spacing and form cell structure which cells can change their configurations with movement of films from one extreme position to another in direction perpendicular to surfaces of films to which extreme films are coupled. In one extreme position corresponding to maximum capacitance cells are joined with surfaces having opposite directions of translation over the whole of their area. In extreme position corresponding to minimum capacitance gap of variable value is formed between opposite surfaces of cells which has minimum value close to sections of direct connection. EFFECT: improved reliability, facilitated manufacture. 4 cl, 15 dwg