DIFFERENTIAL MOSFET VOLTAGE COMPARATOR Russian patent published in 1994 - IPC

Abstract RU 2019913 C1

FIELD: electronics. SUBSTANCE: comparator has current source, matched pair of input first type MOSFETs with common source, which is connected to current source, and gates connected with input signal sources, at least a pair of the second type MOSFETs, which have sources or drains connected to drains of input transistors, gates of pair of input transistors, as well as drains of pairs of second type transistors. Gates and drains are connected in pairs by MOS switches closed in balancing phase preceding phase of comparing of input signals. EFFECT: improved efficiency. 2 cl, 5 dwg

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RU 2 019 913 C1

Authors

Аgrich Ju.V.

Lifshits V.В.

Dates

1994-09-15Published

1992-06-30Filed