METHOD FOR VACUUM SPUTTERING OF TOPOLOGICAL THIN-FILM PATTERN OF HYBRID MICROCIRCUIT ON SUBSTRATE Russian patent published in 2016 - IPC C23C14/56 C23C14/04 C23C28/00 

Abstract RU 2586937 C1

FIELD: technological processes.

SUBSTANCE: invention relates to method for vacuum sputtering of topological pattern of thin-film hybrid microchip on substrate and can be used in microelectronics. Substrate is placed on first mask in first working zone. Create and maintain required vacuum, at least in two working chambers and communicating with them via appropriate vacuum gates of transport zone. After deposition of substrate in first working chamber, with preservation of vacuum, by means of manipulator substrate is separated from first mask. Substrate is moved from first working chamber through transportation zone into second working chamber. Substrate is installed on second mask. Then, second spraying of substrate through second mask is performed.

EFFECT: as result, topological pattern of thin-film of high quality is obtained.

1 cl, 3 dwg

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Authors

Kudryavtsev Rem Vasilevich

Sidorov Denis Yurevich

Yurkova Svetlana Viktorovna

Alyamov Amir Enverovich

Edvabnik Valerij Grigorevich

Tsaj Vladimir Borisovich

Grigoreva Lyubov Vasilevna

Dates

2016-06-10Published

2014-11-25Filed