PLANT FOR VACUUM SPUTTERING OF TOPOLOGICAL PATTERN OF THIN-FILM HYBRID MICROCIRCUIT ON SUBSTRATE Russian patent published in 2016 - IPC C23C14/56 C23C14/04 

FIELD: electricity.

SUBSTANCE: invention relates to microelectronics, particularly to sputtering in vacuum of topological thin-film hybrid microcircuit pattern on substrate. Plant contains first vacuum chamber with process door and with first source of metal and first mask holder with first mask and second vacuum chamber with second process door, second source of metal and second mask holder with second mask, different from first one. Proposed vacuum chamber is communicated with vacuum chambers through corresponding first and second vacuum gates. Manipulator is arranged in said chamber with possibility of enabling gripping and movement of substrate holder with substrate between chambers and its installation on mask holder with mask.

EFFECT: higher efficiency and quality of evaporated pattern.

1 cl, 3 dwg