FIELD: electronic engineering; production of microelectronic devices and digital components.
SUBSTANCE: proposed method for producing thin-film resistors includes vacuum heat pretreatment of substrates mounted in substrate holder by radiation heating and isothermal seasoning for 10 - 15 minutes, precipitation of resistive film on substrates heated to 340 - 380 °C, and their stabilizing annealing at precipitation temperature for 30 minutes; heat pretreatment is effected at temperature exceeding precipitation temperature by 80 - 100 °C, and precipitation of resistive film is conducted with substrate heater switched off.
EFFECT: enhanced yield of high-precision resistors due to reducing impact of uncontrolled destabilizing factors in the course of resistive film precipitation.
1 cl, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| PROCESS OF MANUFACTURE OF FILM RESISTORS | 1992 |
|
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| METHOD OF MANUFACTURING PRECISION THIN-FILM RESISTORS | 0 |
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| PROTECTIVE MATERIAL FOR THIN-FILM RESISTIVE ELEMENTS | 1983 |
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| MATERIAL FOR THIN-FILM RESISTORS | 1993 |
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| DEVICE FOR HEAT TREATMENT OF METAL, SEMICONDUCTOR SUBSTRATES AND AMORPHOUS FILMS | 2021 |
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RU2761867C1 |
| PROCESS OF MANUFACTURE OF HIGH-RESISTANCE THIN-FILM RESISTOR | 0 |
|
SU1308076A1 |
| METHOD OF MANUFACTURE OF FILM RESISTORS | 1996 |
|
RU2109360C1 |
