SILICON SOLAR CELL WITH EPITAXIAL EMITTER Russian patent published in 2009 - IPC H01L31/04 

Abstract RU 2360324 C1

FIELD: power engineering.

SUBSTANCE: invention refers to solar engineering and can be used for manufacturing solar cells. Essence of invention is that in the present solar cell formed on high-alloyed substrate the emitter is the main area absorbing and generating carriers, at that, epitaxial emitter consists of two areas each of which has dopant profile variable as to thickness. Low-alloyed area adjoining pn-transition provides the main light absorption, and high-alloyed area serves for forming a contact. Single-crystalline or multi-crystalline silicon of p- or n- conductivity can be used as silicon substrate.

EFFECT: this solar element design allows increasing efficiency of solar energy conversion.

2 cl, 2 dwg

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RU 2 360 324 C1

Authors

Sokolov Evgenij Makarovich

Statsenko Vladimir Nikolaevich

Stepchenkov Viktor Nikolaevich

Shvarts Karl-Genrikh Markusovich

Jaremchuk Aleksandr Fedotovich

Dates

2009-06-27Published

2007-12-20Filed