SEMICONDUCTOR MAGNETIC TRANSDUCER Russian patent published in 2006 - IPC H01L29/82 

FIELD: semiconductor engineering; bipolar-structure semiconductor devices responsive to magnetic fields.

SUBSTANCE: proposed semiconductor magnetic transducer has single-crystalline silicon substrate and double-collector bipolar transistor. Disposed on substrate surface are transistor base region of low dope concentration, highly doped regions of emitter, first and second metering collector regions whose depth is less than that of base region, and highly doped base contacts disposed within base region. The latter is isolated from substrate by diffusion pocket that has, like substrate, highly doped contacts; substrate contacts and emitter are electrically interconnected and placed at equal potential.

EFFECT: reduced impact of substrate currents onto adjacent parts of integrated circuit; reduced measurement error brought in by initial unbalance of collector currents.

1 cl, 6 dwg