HOT CARRIER SEMICONDUCTOR FAR IR-RANGE LASER Russian patent published in 1994 - IPC

Abstract RU 2022431 C1

FIELD: laser engineering. SUBSTANCE: laser has active element 1 in form of bar made of p-type conductivity germanium, which is mounted inside resonator, formed by spherical metal semitransparent mirror 2 onto optically transparent substrate and by blind metal mirror 3 mounted for movement along optical axis of the laser for distance being multiple to half a generated radiation wavelength from diffraction grating 6, which is mounted between active element 1 and blind mirror 3 onto transparent substrate 4. Side faces of active element 1 and both optically transparent substrates are made to dissipate radiation. Diameter d of semitransparent output mirror 2 relates to its radius of curvature R and with length L of resonator according to relation given in the description of the invention. EFFECT: improved reliability of operation. 1 dwg

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RU 2 022 431 C1

Authors

Demikhovskij Sergej Valer'Evich

Murav'Ev Andrej Valerievich

Pavlov Sergej Gennad'Evich

Shastin Valerij Nikolaevich

Dates

1994-10-30Published

1992-07-01Filed