FIELD: physics.
SUBSTANCE: radiation source comprises semiconductor material ply, multilayer structure with alternating plies with different refractive indices and top and bottom electric contacts. Top contact is composed by a thin 3-30 nm deep metal film arranged above active ply, not over 70 nm therefrom. Depth of plies in this multilayer structure and depth of said thin metal film are selected to maintain long-range propagation of surface plasmons over said surface. Note here that effective refractive index of said propagation approximates to ambient medium refractive index.
EFFECT: higher intensity of output radiation, improved spatial and frequency characteristics, simplified design.
4 cl, 5 dwg
