SEMICONDUCTOR LASER Russian patent published in 1995 - IPC

FIELD: optoelectronics. SUBSTANCE: semiconductor laser has fiber-optic harness of light conductors with polished ends perpendicular to optical lines of light conductors having first and second regular parts with main mode diameters a₁ and a₂ and lengths and , respectively, and gradual transfer region inbetween. Rate of change of main mode radius on gradual-transfer region v meets equation , where L is length of gradual-transfer region; semiconductor active component is secured on ends of first regular part of light conductor. Cavity mirrors are applied to free surface of active component and that of harness of light conductors. Mirror-to-mirror length of light conductors meets condition , where λ is generation wavelength; t_ж is life time of nonequilibrium charge carriers; τ_и is exciting pulse length. To reduce generation threshold, gap is provided on first regular part of light conductors to form two end systems perpendicular to optical axes of light conductors and respective light conductors are coaxial. Semi-transparent mirror is applied to one of end systems in gap. EFFECT: improved design. 3 dwg