KLYSTRON MANUFACTURING PROCESS Russian patent published in 1994 - IPC

Abstract RU 2024100 C1

FIELD: electronic engineering. SUBSTANCE: process involves setting of high-frequency gaps and load of cavities by depositing material absorbing high-frequency energy, such as Alsifer, on surfaces. In manufacturing cavity unit, single drift tube is inserted throughout its entire length and soldered to cavity-to-cavity jumpers, then high-frequency gaps are cut in specified points of tube by electric-arc processing. EFFECT: simplified procedure, improved quality and reliability of klystrons. 7 dwg

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RU 2 024 100 C1

Authors

Kuznetsov S.V.

Pasmannik V.I.

Petrova O.P.

Khadzhi D.L.

Dates

1994-11-30—Published

1991-07-09—Filed