FIELD: electronics. SUBSTANCE: for increased precision of determination of layer thickness of rotating substrate registration of time dependence of intensity of inherent heat radiation of formed structure at wave lengths λ1,λ2,λ3 chosen for defined conditions is conducted, number of half-periods of time dependence of intensity of heat radiation for λ2 is found by relation between intensities of this radiation on wave lengths λ1 and λ3 and thickness layer is calculated by formula. EFFECT: increased precision of determination of thickness of layer. 2 cl, 2 dwg, 2 tbl
Authors
Dates
1994-12-30—Published
1991-04-17—Filed