FIELD: semiconductor electronics, microelectronics, optoelectronics to record and read information. SUBSTANCE: invention is meant for provision for transition of EuO and Eu1-xSmxO films from ferromagnetic to paramagnetic state. Method includes illumination of films by light with wave length 0.4-0.7 μm at temperature of liquid nitrogen with intensity h (hx) excluding heating of film and meets condition , where Io is initial dark current, mA; n is coefficient equal to 1.2-1.5. Change of magnetic state is fixed by change of energy ΔE eV of activation. EFFECT: most simplified demagnetization process of films. 3 dwg
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Authors
Dates
1997-04-20—Published
1992-08-04—Filed