FIELD: semiconductor technology. SUBSTANCE: proposed process involves formation of composition from plate of substrate and plate of source oriented in direction <100> and arranged with gaps of 10-40 μm between them and angles of disorientation of planes perpendicular to their working surfaces equal to 1-20 deg, formation of temperature gradient and subsequent local recrystallization of plate of source by scanning with laser beam till fragmentation zone emerges on its surface. Prior to scanning with laser beam filter presenting round plate with diameter equal to that of plate of source is placed close to surface of plate of source. Through slits are made in effective surface of filter equal to area of square inscribed into circumference of filter. EFFECT: improved efficiency of process.
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