MATRIX OF SILICON-INSULATOR METAL-INSULATOR-SEMICONDUCTOR TRANSISTOR Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: matrix of silicon-insulator MIS transistor includes monocrystal silicon substrate with layers of insulating oxide, recrystallized polysilicon containing regions of drain and source alternating in staggered order formed in sequence, layers of undergate dielectric and gate polysilicon of matrix configuration. Recrystallized polysilicon has contact with substrate. Novelty of matrix silicon-insulator MIS transistor lies in positioning of contact of recrystallized polysilicon with substrate at crossing of sections of gate of gate of matrix configuration. Contact is seed region of recrystallization. Contact are produced in the form of square inscribed in figure of crossing of sections of gate. Size of side of square is smaller than minimal side of figure of crossing. Contacts are placed uniformly over area of transistor. EFFECT: facilitated manufacture, enhanced operational characteristics. 3 dwg