PROCESS OF MANUFACTURE OF DIELECTRIC SUBSTRATES WITH HOLES Russian patent published in 1995 - IPC

Abstract RU 2030136 C1

FIELD: radio electronics. SUBSTANCE: process of manufacture of superthick (up to 0.6-0.9 mm) dielectric substrates with holes of any geometrical shape is based on machining of anodized substrate of aluminium with saturated solution of chromium anhydride prior to formation of photoresistive mask on it. EFFECT: improved quality of substrates due to provision for simultaneous etching of aluminium oxide over entire area.

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RU 2 030 136 C1

Authors

Ignashev E.P.

Krivousova A.K.

Sidorenko G.A.

Grichanov G.A.

Dates

1995-02-27Published

1992-10-13Filed