FIELD: semiconductor engineering. SUBSTANCE: first electrodes of non-linear elements, which have metal-dielectric-metal structure and are made of tantalum, are formed onto isolating substrate. Dielectric layer is applied and peripheral contact areas are formed. According to the first variant of making electrodes the photoresistive mask for etching transparent electrodes of representation elements and the second electrodes of non-linear elements is performed by application of positive photoresistive layer. Electrodes of representation elements are exposed when being made according to negative image of electrodes of image elements. When making second electrodes of non-linear elements they are exposed according to negative image of the second electrodes. Photoresist is returned and then developed. Etching is performed through mask formed. According to the second variant of making the photoresistive mask for etching transparent electrodes of representation elements and the second electrodes of non-linear elements is formed by applying layer of negative photoresist. Electrodes of image elements are exposed during process of making according to negative image of electrodes of representation elements. When making the second electrodes of non-linear elements - according to negative image of the second electrodes with subsequent development. Etching is performed through the mask formed. EFFECT: improved precision; improved efficiency. 2 cl, 7 dwg
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Authors
Dates
1994-09-15—Published
1991-02-20—Filed