PHOTOLITHOGRAPHY PROCESS Russian patent published in 1995 - IPC

Abstract RU 2036536 C1

FIELD: microelectronics. SUBSTANCE: repeated anodic electrodeposition on first aluminium film is made at its butt end. Aluminium layer is covered on top with solid oxide layer and photoresist deposited on it. Partial anodic treatment of aluminium provides for much better adhesion of photoresist. Anodic electrodeposition on open end of film makes it possible to dispense with measures concerting electric potential and to check thickness of formed oxide and, hence, slit width, with high degree of precision. EFFECT: facilitated procedure, improved quality of deposited coat. 7 dwg

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RU 2 036 536 C1

Authors

Lyn'Kov Leonid Mikhajlovich[By]

Semenjakov Leonid Vasil'Evich[By]

Dates

1995-05-27Published

1991-02-15Filed