FIELD: vacuum microelectronics. SUBSTANCE: for triode shaping, two-layer film is formed on substrate from valve metal 2 and aluminium 3; during anodic oxidation, process is carried out up to throughput anodization of aluminium, then mode is changed and valve metal layer is anodized. Emitter is shaped on set of hexagonal, size 10 to 40 nm, naturally formed during anodic oxidation of aluminium. Size of serviceable device is comparable with dimensions of bipolar planar transistor. EFFECT: increased output of serviceable products due to improved electric characteristics of electronic microdevice. 13 dwg
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