FIELD: measurement technology. SUBSTANCE: invention is aimed at creation of reference substance for high-pressure transducers which provides for accurate registration of pressure within 0.71-0.82 GPa in set of reference devices assembled in series. Essence of invention lies in that reference substance is based on samarium monosulfide and produced in the form of polycrystals of nonstoichiometric samarium monosulfide with following proportion of components, atomic per cent: samarium 50.2-53.75; sulfur 46.25-49.8. EFFECT: expanded application field. 1dwg, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF THE TECHNICAL CERAMICS PRODUCTION FROM SAMARIUM MONO-SULFIDE | 2017 |
|
RU2674346C1 |
| MANUFACTURING METHOD OF THIN FILMS BASED ON SAMARIUM MONOSULPHIDE | 2010 |
|
RU2459012C2 |
| METHOD FOR OBTAINING SAMARIUM MONOSULPHIDE-BASED SEMI-CONDUCTOR MATERIAL | 2014 |
|
RU2569523C1 |
| REFERENCE SUBSTANCE FOR HIGH-PRESSURE TRANSDUCERS | 0 |
|
SU1268511A1 |
| THERMOELECTRIC GENERATOR BASED ON SAMARIUM SULPHIDE ALLOYED BY ATOMS OF LANTHANIDES FAMILY AND METHOD OF ITS FABRICATION (VERSIONS) | 2012 |
|
RU2548062C2 |
| REFERENCE SUBSTANCE FOR HIGH-PRESSURE SENSORS | 0 |
|
SU1818561A1 |
| METHOD OF PREPARATION OF REFERENCE SUBSTANCE FOR HIGH PRESSURE TRANSDUCERS | 0 |
|
SU1638579A1 |
| MAGNETIC, TELLURIUM-CONTAINING MANGANESE CHALCOGENIDE WITH GIANT MAGNETORESISTANCE | 2010 |
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RU2454370C1 |
| PROCESS OF MANUFACTURE OF OHMIC CONTACTS FOR SEMICONDUCTOR RESISTORS BASED ON MONOSULFIDE OF SAMARIUM | 1990 |
|
RU2024989C1 |
| BENCH-MARK SUBSTANCE FOR HIGH-PRESSURE TRANSDUCERS | 0 |
|
SU1317295A1 |
