FIELD: chemistry.
SUBSTANCE: invention can be used in microelectronics. The magnetic tellurium-containing manganese chalcogenide with giant magnetoresistance MnSe1-xTex, in which X=0.1; 0.2, 0.4, contains manganese, selenium and tellurium in the following ratio, wt %: manganese 50, 50, 50; selenium 45, 40, 30; tellurium 5, 10, 20.
EFFECT: invention enables to design microelectronic components based on tellurium-containing manganese chalcogenide, which are resistant to radiation and capable of operating in extreme conditions, and reduce costs of producing materials.
3 dwg, 2 tbl
| Title | Year | Author | Number |
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| HOLMIUM-MANGANESE SULFIDE WITH GIANT MAGNETORESISTANCE | 2016 |
|
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