METHOD FOR MANUFACTURING OXIDE-SEMICONDUCTOR CAPACITORS Russian patent published in 1995 - IPC

FIELD: capacitor production process. SUBSTANCE: method for manufacturing oxide-semiconductor capacitors with valve-metal anode involving anode oxidation, application of manganese dioxide layer by multiple cycles of anode impregnation in manganese nitrate solution and its pyrolitic decomposition at 300-400 C, is characterized in that instead of last 4-8 cycles of pyrolysis one or two layers of suspension composed of manganese dioxide, cyclohexanone, and terephthalate resin in 53-60; 43-38; 6-9 mass percent proportion, respectively, is applied to anode. Upon impregnation in mentioned suspension, anodes are exposed to temperature of 240-280 C in the open for 10-20 minutes. EFFECT: reduced labour consumption for manganese dioxide application to anodes, reduced consumption of manganese nitrate, reduced number of capacitors rejected due to leakage current because of smaller number of anode impregnation cycles in manganese nitrate solution and its thermal decomposition at 300-400 C. 2 cl, 4 tbl