METHOD FOR PRODUCING CATHODE PLATE OF OXIDE-SEMICONDUCTOR CAPACITOR Russian patent published in 2006 - IPC H01G9/52 H01G4/10 

Abstract RU 2284070 C9

FIELD: manufacture of oxide-semiconductor capacitors.

SUBSTANCE: proposed method for producing cathode plate includes covering of oxidized volumetric-porous anodes with multilayer manganese dioxide coat, impregnation of anodes with 20% aqueous solution of manganese nitrate, 50 and 62% of aqueous solutions of manganese nitrate and manganese acetate, followed by pyrolytic decomposition of these manganese compounds when anodes are additionally formed after every two layers of manganese dioxide; during pyrolytic decomposition use is made of water vapor and ammonia aqueous solution dopes. Manganese dioxide coating produced by this method is characterized in improved parameters with respect to density, continuity, mechanical strength, and electric conductivity.

EFFECT: enhanced power and frequency characteristics of capacitor using proposed coating.

11 cl, 3 dwg

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RU 2 284 070 C9

Authors

Kalinin Jurij Afanas'Evich

Tsyplakova Ljudmila Nikolaevna

Zirka Valentina Ivanovna

Mymrina Nina Vasil'Evna

Kyrov Valerij Nikolaevich

Dates

2006-09-20Published

2005-01-11Filed