METHOD OF PRODUCING COATINGS FROM MANGANESE DIOXIDE ON TANTALUM ANODES OF OXIDE-SEMICONDUCTOR CAPACITORS Russian patent published in 2021 - IPC H01G9/52 H01G4/10 

FIELD: electrical engineering.

SUBSTANCE: invention relates to electrical engineering, specifically to a method of producing coatings from manganese dioxide on tantalum anodes of oxide-semiconductor capacitors, and can be used in production of electrolytic capacitors. Method includes multiple cyclic impregnation of porous anodes with manganese nitrate solution with concentration of manganese nitrate solution increasing from cycle to cycle and subsequent pyrolytic decomposition of manganese nitrate to manganese dioxide, periodic anode molding after formation of semiconductor layer with deposition of silicon-manganese suspension. First and second impregnation operations of porous anodes are carried out under vacuum, and pyrolytic decomposition of manganese nitrate solution with concentration less than 71% is carried out without water injection, note here that prior to formation of penultimate layer of manganese dioxide, treatment of manganese dioxide coating with reagent solution containing nitric acid and hydrogen peroxide is carried out.

EFFECT: reduced equivalent series resistance in the capacitor with the obtained coating at high frequencies and tangent of the dielectric loss angle.

6 cl, 3 ex, 1 tbl