PHOTODIODE FOR MEDIUM-WAVE INFRARED RADIATION Russian patent published in 2018 - IPC H01L31/109 

FIELD: photo equipment.

SUBSTANCE: photodiode for medium wave infrared radiation contains a substrate and semiconductor layers of p- and n-type conductivity, at least one of which is made of a solid solution containing atoms of indium, arsenic, antimony, phosphorus and admixtures, with a concentration of charge carriers in the range of 10¹⁶ to 10¹⁸ cm^-3, layer adjacent to the above-mentioned solid solution layer is made of a semiconductor of type A³B⁵ with an opposite layer of a solid solution of the type of conductivity and the width of the band gap, which is commensurate with the photon energy near the low-energy photo-sensitivity edge of the photodiode, herewith the concentration of charge carriers on the boundary of the p- and n-type conductivity layers varies smoothly in a direction perpendicular to the above-mentioned boundary.

EFFECT: according to the invention, photodiode provides photo-sensitivity to radiation in the middle infrared region of the spectrum and a small barrier capacity, which is important for recording fast processes.

1 cl, 2 tbl, 3 ex, 7 dwg