METHOD OF EPITAXIAL GROWTH OF INTERFACE BETWEEN MATERIALS FROM III-V GROUPS AND SILICON PLATE, WHICH PROVIDES NEUTRALIZATION OF RESIDUAL DEFORMATIONS Russian patent published in 2019 - IPC H01L21/20 H01L31/304 

FIELD: chemistry.

SUBSTANCE: invention relates to a method of making semiconductor materials containing boundary layers between materials from III-V groups and Si substrate. Invention relates to a method of making semiconductor materials containing GaAs in combination with Si(111) substrates, wherein residual deformation caused by different coefficients of thermal expansion of corresponding materials, is neutralized by adding an additional layer(s) that compensates for residual deformation. Thus, in the disclosed method of epitaxial growth on Si(111) plate, forming a first layer of material III-V with a first constant of the crystal lattice, and then second layer of material III-V from second constant of crystal lattice, wherein the second constant of the crystal lattice is less than the first constant of the crystal lattice.

EFFECT: method provides neutralization of residual deformation in semiconductor materials.

15 cl, 13 dwg