METHOD OF PRODUCING DIODES OF MEDIUM-WAVE INFRARED SPECTRUM Russian patent published in 2018 - IPC H01L31/18 

FIELD: electronics.

SUBSTANCE: invention relates to opto-electronic equipment. Method for producing medium-wavelength IR diodes includes growing on a substrate of arsenide solid solution InAs_1-x-ySb_xP_y and p-n-junction layers of p- and n-type conductivity layers, application of a photosensitive material onto the heterostructure surface, exposure through a mask with a system of dark and light fields, manifestation, removal of at least a portion of the photosensitive material, substrate and epitaxial structure in the formation of mesa (s), surface preparation for the formation of ohmic contacts, coating the surface with layers and / or a substrate of metal compositions of a given geometry, method according to the invention includes the final step of the process of removing the substrate or a part thereof by chemical etching in an aqueous solution of hydrochloric acid.

EFFECT: invention provides an increase in the efficiency of the diode of the medium-wave infrared spectral range by improving the conditions for the output / input of radiation from the semiconductor crystal.

1 cl, 9 dwg, 4 ex