SEMICONDUCTOR INFRARED RADIATION SOURCE (DESIGN VERSIONS) Russian patent published in 2000 - IPC

FIELD: semiconductor optoelectronics. SUBSTANCE: infrared radiation source that may be found useful for gas analyzers, spectrometers, communication systems has, according to first design version, active area of material A³B⁵ and/or its solid solutions with preset forbidden gap and p-n junction; at least one additional active area of same materials as first one is introduced; forbidden gap and thickness of each next optically coupled active area meet definite relations. Second version of device is distinguished by layer of material having definite refractive index which is introduced between at least two optically coupled active areas apart from introducing additional active areas (at least one more area) with definite parameters (forbidden gap and thickness). EFFECT: enlarged radiation range of source at high temperatures. 4 cl, 2 dwg