LIGHT-EMITTING STRUCTURE AND METHOD FOR MANUFACTURING LIGHT- EMITTING STRUCTURE Russian patent published in 2005 - IPC

FIELD: optoelectronics; manufacture of quantum-size light-emitting heterostructures including lasers operating in infrared wave band.

SUBSTANCE: proposed method includes sequential growing of following layers on GsAs substrate by GaAs molecular-beam epitaxy: GaAs buffer layer; lower emitter layer basing on AlGaAs compound; lower part of GaAs waveguide layer; active region formed at substrate temperature of 350 - 380 °C by sequential deposition of GaAsN/InGsAsN superlattice of following chemical composition: indium, 35 - 50% and nitrogen, 2 - 4%, incorporating at least one GaAsN layer and at least one InGsAsN layer, central InAs layer, 0.3 - 0.5 nm thick, GaAsN/InGaAsN superlattice incorporating at least one GaAsN later and at least one InGaAsN later of following chemical composition: indium, 35 - 50% and nitrogen, 2 - 4%, ratio of Group V element currents to group III ones being 1.5 - 5.0, upper part of GsAs waveguide layer, and upper emitter layer based on AlGaAs compound; GaAs contact layer. Proposed light-emitting structure is characterized in affording radiation wavelength of 1.30 to 1.55 μm and has GaAs substrate whereon following layers are grown: GaAs buffer layer; lower emitter layer formed of alternating AlAs and GaAs layers; GaAs waveguide layer with active region in the form of two GaAsN/InGaAsN superlattices abutting against central InAs layer; upper emitter layer based on AlGaAs compound; and GaAs contact layer; each of mentioned superlattices has at least one GaAsN layer and at least one InGaAsN layer.

EFFECT: enhanced radiation wavelength at low threshold current density, high gain, and high differential efficiency.

12 cl, 5 dwg