METHOD FOR MANUFACTURING SUPERCONDUCTOR HETEROSTRUCTURE AROUND AB COMPOUNDS BY WAY OF LIQUID-PHASE EPITAXY Russian patent published in 2007 - IPC H01L21/208 

FIELD: methods for manufacturing heterostructure around A³B⁵ compounds by way of epitaxy.

SUBSTANCE: proposed method for manufacturing semiconductor heterostructure by way of epitaxy includes growth of epitaxial layer of desired thickness h₀ mismatched over lattice perimeter with material whereon it is grown; prior to do so, experimental calibration curve is constructed for given growth system showing maximal layer thickness h_max at which its epitaxial growth still takes place as function of relative mismatch f between lattices at known mechanical strength of layer specified by Poisson's ratio, design calibration curve of minimal layer thickness h_min as function of lattice relative mismatch f at known mechanical strength of layer specified by Poisson's ratio is constructed, and relative lattice mismatch f of materials being joined at which h₀ meets expression h_min < h₀ < h_max, μm is chosen.

EFFECT: ability of generating sufficient number of effective recombination centers in base layers of device.

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