METHOD OF PREPARING MONOCRYSTALLINE FILM OF ZINC OXIDE Russian patent published in 1995 - IPC

Abstract RU 2036218 C1

FIELD: chemical technology. SUBSTANCE: 15-20 g ZnO powder is placed into crucible, air is pumped off up to 2-5 Pa, filled with hydrogen saturated with water vapors up to pressure 1,6·10⁵ Pa Pa, heated up to crucible temperature 990 K and backing temperature - 880 K. Crucible furnace is switched on, backing is heated up to 890-1000 K, kept for 2 min and cooled in inert gas. Luminescence intensity is 2 x 10 relative units. Film is used in opto- and acousto-electronics. EFFECT: improved method of film preparing. 1 dwg

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RU 2 036 218 C1

Authors

Rabadanov R.A.

Dates

1995-05-27—Published

1990-11-22—Filed