LUMINESCENT DEVICE Russian patent published in 1995 - IPC

FIELD: optoelectronics. SUBSTANCE: luminescent device has doped semiconductor substrate with semiconductor layer placed on it, tunnel- thin dielectric layer and conductive layer transparent within visible region of spectrum. Substrate is manufactured from silicon and semiconductor layer is produced from porous silicon with conductance type opposite to that of substrate and doping level at least one order below than level of doping of substrate. Dielectric and conductive layers are positioned over layer of porous silicon. Thickness of dielectric layer meets relation given in description of invention. EFFECT: enhanced stability. 3 dwg