BISTABLE ABSORPTION OPTOELECTRONIC DEVICE Russian patent published in 1994 - IPC

FIELD: optoelectronics. SUBSTANCE: bistable absorption optoelectronic device is based on semiconductor p-i-n heterostructure with barrier in the form of supergrid. Heterostructure is provided with waveguide. Quantum pits are located in it. Energy parameters of zone structure of quantum pit with barrier in the form of supergrid are tied up by following relation -Δ≅(E₁-E_o)≅Δ, where E_o is energy of lower energy level localized in quantum pit reckoned from bottom of quantum pit, eV; E₁ is energy of lower edge of minizone (barrier in the form of supergrid limiting quantum pit) reckoned from bottom of quantum pit, eV; Δ is energy width of minizone of supergrid. EFFECT: increased stability of operation in systems of optical processing of information. 1 dwg