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2 038 841

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IPC

(21) (22)

Application

4446358/26, 1988-06-21

(22)

Actual filing date

1988-06-21

(45)

Published

1995-07-09

(72)

Inventor

Devjatykh G.G.Vorotyntsev V.M.Drozdov P.N.Agliulov N.Kh.Chernjaev S.N.Chichetkin V.I.Silakov G.I.Semenov A.I.Petrik A.G.Fal'Kevich Eh.S.Kononenko E.K.

(73)

Holder

Institut Khimii Vysokochistykh Veshchestv Ran

METHOD OF PRODUCTION OF FILTER MEDIUM FROM SILICON DIOXIDE FOR CLEANING OF GASES AND LIQUIDS Russian patent published in 1995 - IPC

Abstract RU 2038841 C1

FIELD: semiconductors. SUBSTANCE: vapors of SiCl₄ or SiHCl₃ are introduced in the oxydric torch flame, the formed particles of SiO₂ are precipitated on the base of coarsely porous quartz, and sintering is performed at a temperature of 900 to 1300 C. The total time of thermal treatment in the precipitation and sintering stages is 5 to 100 minutes. EFFECT: facilitated procedure. 2 tbl

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RU 2 038 841 C1

Authors

Devjatykh G.G.

Vorotyntsev V.M.

Drozdov P.N.

Agliulov N.Kh.

Chernjaev S.N.

Chichetkin V.I.

Silakov G.I.

Semenov A.I.

Petrik A.G.

Fal'Kevich Eh.S.

Kononenko E.K.

Dates

1995-07-09—Published

1988-06-21—Filed