METHOD OF PRODUCTION OF HIGH-PURITY TRICHLOROSILANE AND DEVICE FOR REALIZATION OF THIS METHOD Russian patent published in 1999 - IPC

FIELD: production of silicon-containing materials; production of chlorosilanes used in microelectronics and high-purity silicon. SUBSTANCE: high-frequency plasma discharge is excited in plasma chemical reactor and reagents - hydrogen and silicon tetrachloride - are fed to zone of discharge; then their interaction is ensured and trichlorosilane is separated from products of reaction as target product. Plasma discharge is excited between two silicon electrodes in form of localized plasmoid of spherical form and reagents are fed to central zone of plasmoid by directional flow from its periphery to center. Device for reralization of this method includes plasma chemical reactor fitted with two electrodes made from high-purity silicon and located at distance relative to each other taking into account forming of plasmoid between them and unit for forming flow of reagents made in form of at least one circular slotted nozzle located coaxially relative to electrode; outer wall of nozzle is formed by surface of truncated cone whose vertex is located in center of zone of formation of plasmoid; outer wall of electrode is used as inner wall of nozzle. Device includes also high-frequency oscillator connected to electrodes. EFFECT: enhanced efficiency. 8 cl, 3 dwg, 1 tbl, 1 ex