METHOD FOR PRODUCTION OF THIN FILMS OF SILICON DIOXIDE Russian patent published in 1995 - IPC

Abstract RU 2040072 C1

FIELD: manufacturing of very-large integral circuits. SUBSTANCE: thin film of silicon dioxide is produced by oxidation of dichlorosilane in quasistatic conditions during single triggered combustion. Flame is ignited by remote pulse local power source. EFFECT: manufacturing films with good uniformity under low temperature.

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RU 2 040 072 C1

Authors

Rubtsov N.M.

Azatjan V.V.

Nagornyj S.S.

Temchin S.M.

Lukashev A.S.

Merzhanov A.G.

Dates

1995-07-20—Published

1991-06-18—Filed