METHOD FOR OBTAINING SILICON DIOXIDE LAYER Russian patent published in 2015 - IPC H01L21/316 

FIELD: chemistry.

SUBSTANCE: in method for obtaining silicon dioxide layer, including loading of semiconductor substrate into reactor, heating semiconductor substrate to required temperature in the range 400-750°C, introduction of oxidiser of nitrous oxide and monosilane and support of pressure in reactor in the range 0.3-20 mm Hg until precipitation of silicon dioxide layer on semiconductor substrate to required thickness, introduction of nitrous oxide and monosilane in reactor is performed in cycles, consisting of successive impulses of nitrous oxide and monosilane, separated impulses of inert purge gas, with number of cycles being calculated basing on required layer thickness and rate of precipitation of silicon dioxide layer during one cycle.

EFFECT: invention makes it possible to provide homogeneous growth of dense layers of silicon dioxide on substrates with complex shape, eliminate interaction of initial reagents or their residues that did not react in reactor and provide localisation of process of silicon dioxide layer formation on the surface of heated substrate.

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