FIELD: microelectronics; manufacture of multilayer very large- scale integrated circuits. SUBSTANCE: method involves oxidation reaction of silicon hydrides under flow conditions at low pressure with inflammation region extended towards lower temperatures (down to 35 C) and pressures using chemically active material such as long-living intermediate product of oxidation reaction proper, dichlorosilane being used as fuel. EFFECT: reduced deposition temperature of thin uniform films homogeneous and stoichiometric in their composition. 3 dwg
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