FIELD: microelectronics very large-scale integrated circuits. SUBSTANCE: method involves excitation of high-frequency discharge of power density not over 0.7 W/cu. cm in gas mixture containing SiCl4 or metal carbonyls mixed with oxygen and/or ammonia at common pressure 3,5·102 torr by means of inductor at room temperature on substrates placed beyond plasma excitation region behind inductor. EFFECT: facilitated procedure. 5 dwg, 1 tbl
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Authors
Dates
1995-09-20—Published
1992-02-28—Filed