FIELD: radio engineering. SUBSTANCE: glass binder relates to glass-forming system PbO-B2O3-SiO2-Al2O3. For pastes used in thick-film resistors carrying oxides of silicon, boron, aluminium and lead starting materials are taken in following quantitative proportions, per cent by mass: SiO2 43.0-47.0; B2O3 3.0-7.0; Al2O3 3.0-7.0; PbO 43.0-47.0. EFFECT: increased quality of thick-film resistors. 2 tbl
| Title | Year | Author | Number | 
|---|---|---|---|
| GLASS | 1994 | 
 | RU2069198C1 | 
| GLASS-BINDER FOR PREPARING OF THICK-FILM RESISTORS ON THE BASIS OF RUTHENIUM-CONTAINING MATERIALS | 1992 | 
 | RU2026578C1 | 
| GLASS | 1995 | 
 | RU2081069C1 | 
| CONDUCTING COMPOSITION | 1992 | 
 | RU2106709C1 | 
| GLASS FOR GLASS CERAMIC CEMENT | 1994 | 
 | RU2069199C1 | 
| GLASS | 1992 | 
 | RU2023691C1 | 
| COMPOSITION FOR MANUFACTURE OF GLASS-LIKE DIELECTRIC MATERIAL | 1995 | 
 | RU2096848C1 | 
| GLASS, MAINLY, FOR INSULATION OF ALUMINUM CONDUCTOR WIRING | 1992 | 
 | RU2036868C1 | 
| METHOD FOR MANUFACTURING OF THICK-FILM RESISTORS | 1994 | 
 | RU2086027C1 | 
| GLASS FOR RESISTORS | 0 | 
 | SU1418301A1 | 
Authors
Dates
1995-09-20—Published
1992-12-30—Filed