FIELD: production of dielectric layers based on glasses for output of glass ceramic cements predominantly for thick-film HICs, electronics, radio engineering. SUBSTANCE: usage of composition provides for increase of thermal stability of vitreous dielectric layers under multiple thermal treatments without deterioration of their vitrification properties and for decrease of sag of thick-film structures. Increase of thermal stability of dielectric material without any deterioration of its vitrification properties is achieved thanks to complete solution of powder of filling agent in vitreous matrix during first cycle of burn-in increasing its crystallization ability which results in insufficient change of phase composition and properties of material during next thermal treatments. Additional increase of thermal stability can be obtained if solution of filling agent in vitreous matrix leads to rise of temperature of start of deformation of residual glass for glass ceramic cement and filling agent based on oxide and/or ceramic of quartz glass. It contains in terms of monolithic glass and filling agent glass and filling agent in the amount of 98.5-99.5 and 0.5-1.5 volume per cent correspondingly. EFFECT: increased thermal stability of composition. 3 tbl
Title | Year | Author | Number |
---|---|---|---|
GLASS | 1995 |
|
RU2081069C1 |
METHOD FOR MANUFACTURING OF THICK-FILM RESISTORS | 1994 |
|
RU2086027C1 |
GLASS FOR GLASS CERAMIC CEMENT | 1994 |
|
RU2069199C1 |
GLASS | 1992 |
|
RU2023691C1 |
GLASS BINDER FOR PASTES OF THICK-FILM RESISTORS | 1992 |
|
RU2044350C1 |
GLASS | 1994 |
|
RU2069198C1 |
GLASS-BINDER FOR PREPARING OF THICK-FILM RESISTORS ON THE BASIS OF RUTHENIUM-CONTAINING MATERIALS | 1992 |
|
RU2026578C1 |
GLASS FOR STRUCTURES OF SILICON-ON-INSULATOR TYPE | 1995 |
|
RU2083514C1 |
GLASS FOR CRYSTALLINE-GLASS DIELECTRIC FOR STRUCTURES OF SILICON-ON- INSULATOR TYPE | 1995 |
|
RU2083515C1 |
CONDUCTING COMPOSITION | 1992 |
|
RU2106709C1 |
Authors
Dates
1997-11-20—Published
1995-04-26—Filed