FIELD: electrical, radio, electronic and other related industries. SUBSTANCE: glass comprises, wt.-%: 8- 48 silicon oxide; 32-61 manganese oxide; 4-47 boron oxides; 1-8 copper oxide; 7-21 aluminium oxide; 1-8 vanadium oxide. Hydrolytic class of glass I-II, starting glass deformation temperature 520-620 C. EFFECT: improved properties of glass. 2 tbl
| Title | Year | Author | Number | 
|---|---|---|---|
| GLASS-BINDER FOR PREPARING OF THICK-FILM RESISTORS ON THE BASIS OF RUTHENIUM-CONTAINING MATERIALS | 1992 | 
 | RU2026578C1 | 
| GLASS BINDER FOR PASTES OF THICK-FILM RESISTORS | 1992 | 
 | RU2044350C1 | 
| GLASS | 1995 | 
 | RU2081069C1 | 
| GLASS FOR GLASS CERAMIC CEMENT | 1994 | 
 | RU2069199C1 | 
| CONDUCTING COMPOSITION | 1992 | 
 | RU2106709C1 | 
| METHOD FOR MANUFACTURING OF THICK-FILM RESISTORS | 1994 | 
 | RU2086027C1 | 
| GLASS | 1992 | 
 | RU2023691C1 | 
| COMPOSITION FOR MANUFACTURE OF GLASS-LIKE DIELECTRIC MATERIAL | 1995 | 
 | RU2096848C1 | 
| GLASS, MAINLY, FOR INSULATION OF ALUMINUM CONDUCTOR WIRING | 1992 | 
 | RU2036868C1 | 
| GLASS FOR RESISTORS | 0 | 
 | SU1418301A1 | 
Authors
Dates
1996-11-20—Published
1994-09-29—Filed