FIELD: radioelectronic engineering. SUBSTANCE: known glass-binder substance containing silicon oxides, zinc oxide and aluminium oxide has additionally boron oxide, lead oxide, calcium oxide, potassium oxide and sodium oxide at the following ratio of components, wt.-%: SiO2 30-40; B2O3 5-15; PbO 25-35; Al2O3 3-8; ZnO 1-7; CaO 2-5; K2O 2-7, and Na2O 1-5. Invention ensures to enhance the quality of thick-film resistors due to moisture resistance of thick-film pastes used for preparing of ruthenium-containing resistors. EFFECT: enhanced effectiveness of glass-binder. 2 tbl
| Title | Year | Author | Number | 
|---|---|---|---|
| GLASS | 1994 | 
 | RU2069198C1 | 
| GLASS BINDER FOR PASTES OF THICK-FILM RESISTORS | 1992 | 
 | RU2044350C1 | 
| CONDUCTING COMPOSITION | 1992 | 
 | RU2106709C1 | 
| GLASS FOR GLASS CERAMIC CEMENT | 1994 | 
 | RU2069199C1 | 
| GLASS | 1995 | 
 | RU2081069C1 | 
| GLASS, MAINLY, FOR INSULATION OF ALUMINUM CONDUCTOR WIRING | 1992 | 
 | RU2036868C1 | 
| GLASS | 1992 | 
 | RU2023691C1 | 
| GAS-SENSITIVE THICK-FILM SENSOR | 1994 | 
 | RU2098806C1 | 
| METHOD FOR MANUFACTURING OF THICK-FILM RESISTORS | 1994 | 
 | RU2086027C1 | 
| COMPOSITION FOR MANUFACTURE OF GLASS-LIKE DIELECTRIC MATERIAL | 1995 | 
 | RU2096848C1 | 
Authors
Dates
1995-01-09—Published
1992-05-21—Filed