FIELD: radioelectronic engineering. SUBSTANCE: known glass-binder substance containing silicon oxides, zinc oxide and aluminium oxide has additionally boron oxide, lead oxide, calcium oxide, potassium oxide and sodium oxide at the following ratio of components, wt.-%: SiO2 30-40; B2O3 5-15; PbO 25-35; Al2O3 3-8; ZnO 1-7; CaO 2-5; K2O 2-7, and Na2O 1-5. Invention ensures to enhance the quality of thick-film resistors due to moisture resistance of thick-film pastes used for preparing of ruthenium-containing resistors. EFFECT: enhanced effectiveness of glass-binder. 2 tbl
Title | Year | Author | Number |
---|---|---|---|
GLASS | 1994 |
|
RU2069198C1 |
GLASS BINDER FOR PASTES OF THICK-FILM RESISTORS | 1992 |
|
RU2044350C1 |
CONDUCTING COMPOSITION | 1992 |
|
RU2106709C1 |
GLASS | 1995 |
|
RU2081069C1 |
GLASS FOR GLASS CERAMIC CEMENT | 1994 |
|
RU2069199C1 |
GLASS, MAINLY, FOR INSULATION OF ALUMINUM CONDUCTOR WIRING | 1992 |
|
RU2036868C1 |
GLASS | 1992 |
|
RU2023691C1 |
GAS-SENSITIVE THICK-FILM SENSOR | 1994 |
|
RU2098806C1 |
METHOD FOR MANUFACTURING OF THICK-FILM RESISTORS | 1994 |
|
RU2086027C1 |
COMPOSITION FOR MANUFACTURE OF GLASS-LIKE DIELECTRIC MATERIAL | 1995 |
|
RU2096848C1 |
Authors
Dates
1995-01-09—Published
1992-05-21—Filed