DEVICE FOR CRYSTAL GROWING Russian patent published in 1995 - IPC

Abstract RU 2049829 C1

FIELD: growing of single crystals from melt. SUBSTANCE: device for crystal growing includes ampoule with conical bottom vertically installed in coaxial heater on the support having depression corresponding to cone angle in which fixed heater is located for initiating crystallization. means for crystallization in ampoule cylindrical part is made in form of movable heater connected with mechanism of vertical motion, and coaxial heater is installed upper half-of ampoule. Crystals of sodium iodide and cesium iodide are obtained with initial material-to-product yield up to 80% EFFECT: higher efficiency. 1 dwg

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RU 2 049 829 C1

Authors

Kisil' I.I.

Ljubinskij V.R.

Dates

1995-12-10Published

1991-07-12Filed